Home > Gate Drive Optocoupler >

FOD3125 3A Gate Drive Optocoupler High Temperature 5000Vrms 1 Channel 8-PDIP

Product Categories

Integrated Circuits ICs [45]
Programmable Logic ICs [15]
Zener Diode IC [13]
RF Pin Diode [15]
Electronic Component Diode [15]
Solid State Relays [10]
IGBT Transistor Module [20]
Input Output Connectors [15]
Multilayer Ceramic Capacitors [10]
Gate Drive Optocoupler [16]
Digital Mems Microphone [11]
Fan Tubeaxial [10]
Lithium Manganese Dioxide Button Cell [7]
Common Mode Chokes [10]
General Purpose Relays [15]
D Sub Standard Connectors [10]
Power Management ICs [10]

HongKong Wei Ya Hua Electronic Technology Co.,Limited

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

FOD3125 3A Gate Drive Optocoupler High Temperature 5000Vrms 1 Channel 8-PDIP

Name: FOD3125 3A Gate Drive Optocoupler High Temperature 5000Vrms 1 Channel 8PDIP
Brand: onsemi
Price: 1 USD

Brand Name : onsemi

Model Number : FOD3125

MOQ : 50pcs

Price : Negotiable

Supply Ability : 1000000pcs

Current - Peak Output : 3A

Voltage - Forward (Vf) (Typ) : 1.5V

Current - DC Forward (If) (Max) : 25 mA

Voltage - Output Supply : 15V ~ 30V

Operating Temperature : -40°C ~ 125°C

Package / Case : 8-DIP (0.300", 7.62mm)

Contact Now

FOD3125 3A Gate Driver Optical Coupling 5000Vrms 1 Channel 8-PDIP

onsemi FOD3125 High Temperature Gate Drive Optocoupler

onsemi FOD3125 High Temperature Gate Drive Optocoupler offers a 2.5A output current, and is designed to drive most medium power IGBT/MOSFET at high temperatures up to 125°C. The FOD3125 is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications and high performance power systems. The FOD3125 Gate Drive Optocoupler utilizes the proprietary onsemi Optoplanar® packaging technology and optimized IC design to achieve high noise immunity, characterized by high common mode rejection.

The FOD3125 Gate Drive Optocoupler consists of a Gallium Aluminum Arsenide (AlGaAs) Light Emitting Diode optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage.

FEATURES

Extended Industrial Temperate Range, -40°C to 125°C
High Noise Immunity Characterized by 35kV/µs Minimum Common Mode Rejection
2.5A Peak Output Current Driving Capability for Most 1200V/20A IGBT
Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail
Wide Supply Voltage Range from 15V to 30V
Fast Switching Speed
- 400 ns max. Propagation Delay
- 100 ns max. Pulse Width Distortion

Under-Voltage LockOut (UVLO) with hysteresis
Safety and Regulatory (Pending for Approval)
- UL1577, 5000 VACRMS for 1 min.
- DIN EN/IEC60747-5-5, 1,414 V Peak Working Insulation Voltage (VIORM)
RDS(ON) of 1Ω (typical) Offers Lower Power Dissipation
1414V Peak Working Insulation Voltage (VIORM)
Pb−Free Device

APPLICATIONS

Industrial Inverter
Uninterruptible Power Supply

Induction Heating
Isolated IGBT/Power MOSFET Gate Drive

BLOCK DIAGRAM

Product Tags: